The atomic layer etching process typically consists of two main steps that are repeated in a cyclic manner: Surface Modification: In this step, a reactive species, such as a gas or plasma, is ...

The chemical etching process he used is a bit fussy ... in the middle of which sits a vacuum chamber for the wafer to be etched. After evacuating the air, a small amount of fluorinated gas ...

Reactive Ion Etch (RIE) is a physical etch process. A rich plasma has been made just above the wafer, and the ions are expedited toward the surface to generate a highly powerful anisotropic etch.

3. Plasma Etching: In this process, chemical etchant is introduced in the gas phase. For etching silicon oxide, CF4 (tetrafluoromethane) is used. In a chamber, there are two electrodes; one is holding ...

High-performance process chambers combined with innovative chemical ... “With SERENO, we provide Wet Etch and Clean solutions ...