Extreme Wafer Thinning and nano-TSV processing for 3D …
To do so, a dedicated sub-micron wafer thinning process was developed that enables a very tight thickness control over the entire wafer, with less than 70nm total thickness variation (TTV), and nano-TSV's were etched using a Bosch process applied to extremely small CD structures (180x250nm top CD).
Buried Power Rails and Nano-Scale TSV: Technology ... - IEEE Xplore
2022年5月31日 · To improve the on-chip power delivery, a back-side power delivery network (BSPDN) with nano-through-silicon vias (nano-TSV) directly landing on buried power rails (BPR) of the standard cells has been developed.
Etch of nano-TSV with smooth sidewall and excellent selection …
In this study, the effect of nano-TSV scallop patterns on the metal filling is investigated. Non-Bosch and Bosch techniques are compared using simulation and inductively coupled plasma (ICP). Both etching methods achieve the smooth sidewall of nano-TSV.
Nano-Through Silicon Vias (nTSV) for Backside Power ... - IEEE …
In this paper we discuss the driving forces for moving to chip backside power delivery. Possible integration flows and challenges are discussed for integrating through-silicon via (TSV) connections that directly interconnect the chip at the standard-cell level.
Extreme Wafer Thinning and nano-TSV processing for 3D …
2020年6月1日 · IMEC developed NaNO-TSV (Through Silicon Vias) connection for heterogeneous integration as 3D system-on-chip (3D-SoC) integration technology which possess a wafer-to-wafer bonding approach ...
Three-dimensional integration of nanotechnologies for ... - Nature
2017年7月6日 · We present an experimental prototype of a new computing system, which integrates multiple new nanotechnologies to realize a 3D integrated circuit architecture.
I. INTRODUCTION Nano-TSVs are sub-micron Cu-filled vias, that can provide an option for efficient power delivery network through the backside of device wafers. The use of nano-TSVs helps to free up space on the wafer front-side [1], [2], [3].
Extreme Wafer Thinning and nano-TSV processing for 3D …
2020年6月1日 · This paper presents a novel approach for extreme wafer thinning on carrier followed by nano-scale via-last formation in order to achieve sub-500nm pitch interconnects, electrically connecting the backside to the frontside of a device wafer.
Challenges In Backside Power Delivery - Semiconductor Engineering
2022年11月17日 · Figure 2 shows three implementations of backside power delivery networks. “In the first approach, the logic cells retain a power rail, and the backside power distribution network is connected to the power rail by a nano TSV,” said …
Intel Details PowerVia Chipmaking Tech: Backside Power ... - AnandTech
2023年6月5日 · In PowerVia, there are nano-scale TSVs (aptly named Nano TSVs) in the transistor layer of the chip. This is in contrast to buried power rails, which is what industry pioneer IMEC has been...
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